SSF3314E
GOOD-ARK
318.97kb
N-channel mosfet. The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
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SSF3314E - MOSFET
(Silikron Semiconductor)
SSF3314E
DESCRIPTION
The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
SSF3322 - MOSFET
(Silikron Semiconductor)
SSF3322
DESCRIPTION
The SSF3322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as .
SSF3324 - MOSFET
(Silikron Semiconductor Co)
Main Product Characteristics:
VDSS
30V
RDS(on) 26.5mΩ(typ.)
ID
5.8A ①
SSF3324
SOT-23
Marking and pin Assignments
Schematic Diagram
Features .
SSF3324 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
30V
RDS(on) 26.5mohm(typ.)
ID 5.8A ①
SOT23
Features and Benefits
Advanced trench MOSFET process technology .
SSF3338 - MOSFET
( Silikron Semiconductor Co)
SSF3338
..
DESCRIPTION
The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is .
SSF3338 - N-Channel MOSFET
(GOOD-ARK)
SSF3338
30V N-Channel MOSFET
DESCRIPTION
The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is.
SSF3339 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
ID
-30V 37mΩ (typ.)
-4.1A ①
SOT-23
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF3339 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
-30V 37mΩ (typ.)
-4.1A ①
SOT-23
Features and Benefits
Advanced MOSFET process technology Special .
SSF3341 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
ID
-30V 39mΩ (typ.)
-4.2A ①
SOT-23
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF3341 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
-30V 42mΩ (typ.)
-4.2A ①
SOT-23
Features and Benefits
Advanced MOSFET process technology Special .