Description
Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.
Features
* SOT23-6
* Advanced trench MOSFET process technology
* Special designed for buttery protection, load
switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature
* Lead free pro
Applications
* Absolute Max Rating
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
Limit
-30 ±25 -4 -25 1.7 -55 To 150
Unit
V V A A W ℃
Thermal Resi