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SSF3056C MOSFET

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Description

Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 37mohm(typ.) 68mohm(typ.) D1 NMOS S1 D1 G1 D2 S2 PMOS D2 G2 ID 5A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ra.

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Features

* -4.5A DFN2X3-8L Bottom View
* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge

SSF3056C Distributors

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