SSF3056C
SilikrON Semiconductor ↗
432.21kb
Mosfet. It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repeti
TAGS
📁 Related Datasheet
SSF3056C - MOSFET
(GOOD-ARK)
Main Product Characteristics
SSF3056C
30V Complementary MOSFET (Preliminary)
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 37mohm(typ.) 68mohm(typ.)
ID 5A
.
SSF3051G7 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
-30V
RDS(on) 45mohm(typ.) ID -4A
SOT23-6
Features and Benefits:
Advanced t.
SSF3051G7 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
-30V
RDS(on) 45mohm(typ.)
ID -4A Features and Benefits:
SOT23-6
Advanced trench MOSFET process technology .
SSF3055 - MOSFET
(Silikron Semiconductor)
DESCRIPTION
The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery.
SSF3002EG1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 1ohm(typ.)
ID 0.5A①
SOT23
Features andBenefits:
Advanced trench MOSFET process technology Spe.
SSF3006DB - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 3.6mΩ(Typ.)
ID
90A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology S.
SSF3006DBC - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 4.2mΩ(Typ.)
ID
100A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology .
SSF3014 - N-Channel MOSFET
(Silikron Semiconductor Co)
SSF3014 ..
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
SSF3018 - N-Channel MOSFET
(Silikron Semiconductor Co)
..
SSF3018
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.
SSF3018D - N-Channel MOSFET
(Silikron Semiconductor Co)
.. SSF3018D
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.