SSF3420
GOOD-ARK
703.04kb
N-channel mosfet. The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a lo
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SSF3420 - PWM applications
(Silikron Semiconductor Co)
SSF3420
..
DESCRIPTION
The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is .
SSF3428 - PWM applications
(Silikron Semiconductor Co)
SSF3428
..
DESCRIPTION
The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is .
SSF3428 - N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw.
SSF3400K - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 25.8mΩ (typ.)
ID
5.8A
SOT-23
Features and Benefits:
Advanced trench MOSFET process technology Sp.
SSF3401 - PWM applications
(Silikron Semiconductor Co)
..
SSF3401
DESCRIPTION
The SSF3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
SSF3402 - MOSFET
(Silikron Semiconductor Co)
Main Product Characteristics:
VDSS
30V
RDS(on) 45mΩ(typ.)
ID
5A
Features and Benefits
SOT-23
Advanced MOSFET process technology Special de.
SSF3415 - 20V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
V(BR)DSS
-20V
RDS(ON)MAX ID
50mΩ@-4.5V
60mΩ@-2.5V 73mΩ@-1.8V
-4 A
SOT-23
SSF3415
20V P-Channel MOSFET
D
3415
Mark.
SSF3416 - MOSFET
(Silikron Semiconductor)
SSF3416
DESCRIPTION
The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as .
SSF3002EG1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 1ohm(typ.)
ID 0.5A①
SOT23
Features andBenefits:
Advanced trench MOSFET process technology Spe.
SSF3006DB - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 3.6mΩ(Typ.)
ID
90A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology S.