SF5 Datasheet | Specifications & PDF Download

Freescale Semiconductor Advance Information Document order number: MC07XSF517 Rev. 2.0, 9/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch Th

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SHINDENGEN Super Fast Recovery Rectifiers SF5LC20U OUTLINE DIMENSIONS Case : FTO-220 200V 5A FEATURES Low noise trr35ns Fully Isolated Molding Diel

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CYStech Electronics Corp. Spec. No. : C194LD Issued Date : 2017.09.01 Revised Date :2017.10.11 Page No. : 1/3 Super-fast Plastic Rectifiers Reverse

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FEATURES ◆ Built-in 600V Power MOSFET ◆ Proprietary NC-Cap/PSR-IITM Control: ● ±4% CC and CV Precision ● Proprietary “Audio Noise Cancellation” Contro

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www.DataSheet4U.com SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATI

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SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak

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www.DataSheet4U.com White Electronic Designs 512KX32 SRAM / FLASH MODULE FEATURES Access Times of 25ns (SRAM) and 70, 90ns (FLASH) Packaging • 66 pin

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www.DataSheet4U.com SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATI

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www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applicati

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SHINDENGEN Super Fast Recovery Rectifiers Single SF5L60U 600V 5A OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings

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RSF/RSMF Series General Purpose Metal Oxide Resistor Stackpole Electronics, Inc. Resistive Product Solutions Features: • Lower-cost alternative to

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Jingdao Microelectronics co.LTD SUPER FAST GLASS PASSIVATED RECTIFIERS Reverse Voltage – 100 to 600 V Forward Current – 5.0 A FEATURES • High current

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SF51G THRU SF58G RoHS COMPLIANT Super Fast Recovery Rectifier Features ● Ultrafast reverse recovery time ● Low leakage current ● Low switching losse

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SF51G THRU SF58G RoHS COMPLIANT Super Fast Recovery Rectifier Features ● Ultrafast reverse recovery time ● Low leakage current ● Low switching losse

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4GB, 8GB (x72, DR) 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF51272PDZ – 4GB MT18KSF1G72PDZ – 8GB Features • DDR3L functionali

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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SF5887 2nd Generation Quasi-Resonant (QR-IITM ) PWM Controller OTP Protection FEATURES ◆ Meet EPS Level 6 ◆ Proprietary QR-IITM Technology: ●Digital

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TSP5N65M / TSF5N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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MMSF5N03HD Preferred Device Power MOSFET 5 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logi

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