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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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SM4377NSKP Features • 30V/50A, RDS(ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V • Provide Excellent Qgd x Rds-on • 100% UIS + R Tes

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Machine Translated by Google 1. Features 8-bit MCU based on 8051 compatible pipeline instructions ÿ Flash ROM: 32K bytes ÿ RAM: internal 256 bytes, e

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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SH367105/SH367106/SH367107/SH367108 Pack 1. ： - VOV：3.6V - 4.5V (10mV) ：±25mV - VOVR1：3.3V - 4.5V (10mV) ：±50mV - VUV：2.0V - 3.1V (100mV) ：±50mV -

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www.DataSheet4U.com SH69P25 PRELIMINARY Features „ „ „ „ „ „ „ „ „ „ SH6610C-based single-chip 4-bit micro-controller OTPROM: 4096 X 16 bits RAM: 160

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SM3307PSQA/SM3307PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V ·

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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SM4508NHKP ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/48A, RDS(ON)=6.8mW (Max.) @ VGS=10V RDS(ON)=11mW (Max.) @ VGS=4.5V ·

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SH366000 Preliminary SBS Solution 、  2-，3-，4-  SMBus v1.1SBData1.1  ，  ，  ，  ，／／／   ，  4-，5-LED，  、 RESETB NC NC LED0 LED1 LED2 LED3 L

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package

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SH367105/SH367106/SH367107/SH367108 Pack 1. ： - VOV：3.6V - 4.5V (10mV) ：±25mV - VOVR1：3.3V - 4.5V (10mV) ：±50mV - VUV：2.0V - 3.1V (100mV) ：±50mV -

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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SM3319NSQA/SM3319NSQG ® N-Channel Enhancement Mode MOSFET Features • 30V/23A, RDS(ON) = 21mΩ(max.) @ VGS = 10V RDS(ON) = 30mΩ(max.) @ VGS = 4.5V

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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