SE3080A - N-Channel MOSFET

This page provides the datasheet information for the SE3080A, a member of the SE3080A-Sino N-Channel MOSFET family.

Product Overview

Part number	SE3080A
Manufacturer	Sino-IC
File Size	444.16 KB
Description	N-Channel MOSFET
Datasheet	SE3080A Datasheet
Additional preview pages of the SE3080A datasheet.

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A).
RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS.

Other Datasheets by Sino-IC

Published: Feb 22, 2019 |