SE3080A Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

 Simple Drive Requirement  Small Package Outline  Surface Mount Device

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A).
RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS.