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SE3080A - N-Channel MOSFET

Download the SE3080A datasheet PDF. This datasheet also covers the SE3080A-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device

Key Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A).
  • RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SE3080A-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SE3080A
Manufacturer Sino-IC
File Size 444.16 KB
Description N-Channel MOSFET
Datasheet download datasheet SE3080A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.