Datasheet Summary
SE3080A/K N-Channel Enhancement-Mode MOSFET
Revision: A
General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.
- Simple Drive Requirement
- Small Package Outline
- Surface Mount Device
Features
For a single MOSFET
- VDS = 30V
- RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)
- RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K)
Pin configurations
See Diagram...