Datasheet Summary
SE3082G N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
- Simple Drive Requirement
- Small Package Outline
- Surface Mount Device
Features
For a single MOSFET
- VDS = 30V
- RDS(ON) = 5.0mΩ @ VGS=10V
Pin configurations
See Diagram below
D1 D1 D2 S1D2 87 65
D1 D1
D2 D2
1 2 34 G1 S2 S2...