Datasheet Details
| Part number | SE3082G |
|---|---|
| Manufacturer | Sino-IC |
| File Size | 590.23 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SE3082G Datasheet
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General Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Key Features
- For a single MOSFET.
- VDS = 30V.
- RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Thermal Resistance Symbol RθJC RθJA Parameter Junction to Case Junction to Ambient G1 S1 G2 S2 Symbol VDS VGS ID PD TJ Rating 30 ±20 80 170 3.1 -5.