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SE3082G Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: SE3082G N-Channel Enhancement-Mode MOSFET Revision: A General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device

Key Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Thermal Resistance Symbol RθJC RθJA Parameter Junction to Case Junction to Ambient G1 S1 G2 S2 Symbol VDS VGS ID PD TJ Rating 30 ±20 80 170 3.1 -5.

More Datasheets from Sino-IC

Part Number Description
SE3080A N-Channel MOSFET
SE3080G N-Channel MOSFET
SE3080K N-Channel MOSFET
SE3035 N-Channel MOSFET

SE3082G Distributor