SE3080G - N-Channel MOSFET

Product Overview

Part number	SE3080G
Manufacturer	Sino-IC
File Size	339.73 KB
Description	N-Channel MOSFET
Datasheet	SE3080G Datasheet
Note	This datasheet PDF includes multiple part numbers: SE3080G, SE3080G-Sino. Please refer to the document for exact specifications by model.
Additional preview pages of the SE3080G datasheet.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.

📁 Similar Datasheet

Other Datasheets by Sino-IC

Published: Feb 22, 2019 |