Datasheet Details
| Part number | SE3080G |
|---|---|
| Manufacturer | Sino-IC |
| File Size | 339.73 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SE3080G Datasheet
|
|
|
General Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- For a single MOSFET.
- VDS = 30V.
- RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
- 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.