SE3080G Overview
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SE3080G Key Features
- VDS = 30V
- RDS(ON) = 4.5mΩ @ VGS=10V
SE3080G Datasheet Details
| Part number | SE3080G |
|---|---|
| Datasheet | SE3080G SE3080G-Sino Datasheet (PDF) |
| File Size | 339.73 KB |
| Manufacturer | Sino-IC |
| Description | N-Channel MOSFET |
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