SE3080G Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of application

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.