SE3080G - N-Channel MOSFET

This page provides the datasheet information for the SE3080G, a member of the SE3080G-Sino N-Channel MOSFET family.

Product Overview

Part number	SE3080G
Manufacturer	Sino-IC
File Size	339.73 KB
Description	N-Channel MOSFET
Datasheet	SE3080G Datasheet
Additional preview pages of the SE3080G datasheet.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.

Other Datasheets by Sino-IC

Published: Feb 22, 2019 |