SE3080G
Overview
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
- VDS = 30V
- RDS(ON) = 4.5mΩ @ VGS=10V
| Part | SE3080G |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Sino-IC |
| Size | 339.73 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SE308 | NEC | Light Emitting Diode |