SE3080G Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SE3080G Key Features
- VDS = 30V
- RDS(ON) = 4.5mΩ @ VGS=10V
SE3080G Datasheet
| Part Number | Description |
|---|---|
| SE3080A | N-Channel MOSFET |
| SE3080K | N-Channel MOSFET |
| SE3082G | N-Channel MOSFET |
| SE3035 | N-Channel MOSFET |
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.