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SE308 Datasheet Light Emitting Diode

Manufacturer: NEC (now Renesas Electronics)

Overview: NEe NEC Electronics Inc. SE308 GaAslNFRARED EMITTING DIODE NEPOC.

General Description

The SE308 is a GaAs (Gallium Arsenide) infrared LED in a plastic molded package, and is very suitable as a detector of a photo interrupter.

On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm.

Package Dimensions Absolute Maximum Ratings TA = +25°C Power Dissipation, PD Forward Current, 'F Reverse Voltage, VR Junction Temperature, TJ Operating Temperature, TOPT Storage Temperature, TSTG 100mW 50mA 5V TRANSPARENT EPOXY I' '1 2.5 (0.09.) t 2.• - 4 - (0.110) 1.:!r=i==f=;::=?J~ 0.76 '-~ J ~ I".030) - ,,~,'::., ®~ ®~ T -l=1-- (0.043) 16.5 ± 1.0 ) (OOO~.) - I- -,::, U 0.46 (0.01.) I , L 2.54 _I 1(0.100)1 ® f Package Dimensions in Millimeters (Inches) G) CD Anode ® Cathode 83·000259A Electrical Characteristics TA = +25°C Limits Parameters Symbol Min Typ Max Forward Voltage VF 1.1 1.4 Reverse Current 'R Capacitance Cr 100 Test Unit Conditions V 'F = 20mA p.A VR = 5V pF V = 0, f = 1.0MHz Peak Emission Wavelength APEAK 940 nm 'F = 20mA Spectral Line Half Width ~A 60 'E Radianllntensity 0.5 0.85 Response Time 10N,IOFF nm 'F = 20mA mW/sr 'F = 20mA "S 'F = 20mA II 3-13 SE308 NEe Typical Characteristics TA = +25°C Maximum Forward Current vs Ambient Temperature 60 Forward Current vs Forward Voltage 0 50 ".!§.

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More Datasheets from NEC (now Renesas Electronics)

Part Number Description
SE301A Light Emitting Diode
SE302A Light Emitting Diode
SE303A Light Emitting Diode
SE306 Light Emitting Diode
SE307 Light Emitting Diode

SE308 Distributor