SE308 datasheet by NEC (now Renesas Electronics).
| Part number | SE308 |
|---|---|
| Datasheet | SE308-NEC.pdf |
| File Size | 83.38 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | Light Emitting Diode |
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The SE308 is a GaAs (Gallium Arsenide) infrared LED in a plastic molded package, and is very suitable as a detector of a photo interrupter. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Ratings TA = +25°C Power Dissipation, PD Forward Current, 'F Reverse Voltage, VR Junction Temperature, TJ Operating Temperature, TOPT Storage Temperature, TSTG 100mW 50mA 5V...
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|---|---|---|---|
| Sino-IC | SE3080A | N-Channel MOSFET | Sino-IC |
| Sino-IC | SE3080G | N-Channel MOSFET | Sino-IC |
| Sino-IC | SE3080K | N-Channel MOSFET | Sino-IC |
| Sino-IC | SE3082G | N-Channel MOSFET | Sino-IC |
View all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| SE301A | Light Emitting Diode |
| SE302A | Light Emitting Diode |
| SE303A | Light Emitting Diode |
| SE306 | Light Emitting Diode |
| SE307 | Light Emitting Diode |
