Datasheet Details
| Part number | SE306 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 79.94 KB |
| Description | Light Emitting Diode |
| Datasheet | SE306-NEC.pdf |
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Overview: tttrEC NEe Electronics Inc. , SE306 GaAslNFRARED EMITTING DIODE NEPOC.
| Part number | SE306 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 79.94 KB |
| Description | Light Emitting Diode |
| Datasheet | SE306-NEC.pdf |
|
|
|
The SE306 is a GaAs (Gallium Arsenide) infrared LED in a plastic molded package, and is very suitable for a detector of a photo interrupter.
On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm.
Package Dimensions Absolute Maximum Ratings TA = +25°C Power Dissipation, Po Forward Current, IF Reverse Voltage, VR Junction Temperature, TJ Storage Temperature, TSTG 100mW 50mA 5V 100·C -40·C to +1000C Package Dimensions in Millimeters (Inches) Electrical Characteristics TA = +25°C Parameters Limits Symbol Min Typ Max Unit Test Conditions Forward Voltage VF Reverse Current IR Capacitance CT 1.4 10 100 V IF = 10mA "A VR = 5V pF V = 0, f = 1.0MHz Peak Emission Wavelength ApEAK 940 nm IF = 10mA Spectral Line Half Width A)" 60 nm IF = 10mA Output Power Po 0.2 mW/sr IF = 10mA 11 fD 1c~ CD Anode ® Cathode 83-0002S2A 3-9 5E306 NEe Typical Characteristics TA = +25°C Maximum Forward Current VI Ambient Temperature 60 60 50 C !
| Part Number | Description |
|---|---|
| SE301A | Light Emitting Diode |
| SE302A | Light Emitting Diode |
| SE303A | Light Emitting Diode |
| SE307 | Light Emitting Diode |
| SE308 | Light Emitting Diode |