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SE307 - Light Emitting Diode

General Description

The SE307 is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on the lead frames and molded in plastic.

On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm.

Key Features

  • D Economical D High radiant intensity D Narrow half angle D Good linearity D Spectrally matched to silicon sensors D Long lead.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
SE301A Light Emitting Diode
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SE303A Light Emitting Diode
SE306 Light Emitting Diode
SE308 Light Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEe NEe Electronics Inc. 5E307 GaAslNFRARED EMITTING DIODE NEPOC SERIES Description The SE307 is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Features D Economical D High radiant intensity D Narrow half angle D Good linearity D Spectrally matched to silicon sensors D Long lead Applications D Light source for TV remote control D Light source for smoke detector D Optical encoders D Photo choppers, isolators Black Plastic Resin str~$;:=---i 5,L~---,-; (OOO~I) 4.3 ± 0.5 -~-- 0.6 (0.024) Part A: 1.04 1(0.169) (0.041) Part B: 0.6 (0.024) 24 Min (0.945 Min) A: ~1.2 Max (¢0.047 Max) B: IbO.B Max (~0.031 Max) 2 ± 0.