NEC SE302A
The SE302A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a lead frame and molded in a clear plastic lens. The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility open new areas of use anywhere an infrared source is desirable.| Part No. | SE302A |
|---|---|
| Datasheet | SE302A Download |
| Manufacturer |  NEC |
| Description | Light Emitting Diode |
| Buy | Stock & Price |
DESCRIPTION
On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions 2.4 Max (0.094 Max) 22.0 Min (0.866 Min) 0.51 (0.02)FEATURES
D Low cost D High output power D Fast switching time D Long life, solid state reliability D Compact, rugged, lightweight D Spectrally matched to silicon sensors (Good com- patibility with Darlington photo transistor (PH101)) D Easily assembled in linear arrays D Compatible with integrated circuitsAPPLICATIONS
D Electro optical switches D Card and tape reader sources D Optical encoders D Photo choppers, isolator D High speed optoelectronic data links D Photo couplerABSOLUTE MAXIMUM RATINGS
TA=+25°C Power Dissipation, Po Forward Current, IF Reverse Voltage, VR Junction Temperature, TJ Storage Temperature, TSTG 75mW 50mA 3.0V +80"C -30'C - +80'C II Package Dimensions in Millimeters (Inches)●Soldering conditions are al 260°C or less within 5 sec. at 3mm or farther from the case. CD Anode ® Cathode 83-000238A Electr...
