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SE302A - Light Emitting Diode

General Description

The SE302A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a lead frame and molded in a clear plastic lens.

On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm.

Key Features

  • D Low cost D High output power D Fast switching time D Long life, solid state reliability D Compact, rugged, lightweight D Spectrally matched to silicon sensors (Good com- patibility with Darlington photo transistor (PH101)) D Easily assembled in linear arrays D Compatible with integrated circuits.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEe NEe Electronics Inc. SE302A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE NEPCO SERIES Description The SE302A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a lead frame and molded in a clear plastic lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility open new areas of use anywhere an infrared source is desirable. Package Dimensions 2.4 Max (0.094 Max) 22.0 Min (0.866 Min) 0.51 (0.