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SE301A - Light Emitting Diode

General Description

The SE301A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a TO-1S hermetically sealed header with a glass lens.

On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm.

Key Features

  • o Low cost o High output power - 3mW min o Fast switching time o Long life-solid state reliability o Compact, rugged, lightweight o Spectrally matched to silicon sensors.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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t-iEC NEe Electronics Inc. SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE NEPCO SERIES Description The SE301A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a TO-1S hermetically sealed header with a glass lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility opens new areas of use anywhere an infrared source is desirable. Package Dimensions T0-18 Header with glass lens 4_ 5.35 tO~2~;r-O.2-- 1 :r0.161)1 0.2 1 II 0.016) ~4.6~"0.2_ (0.181) "'" I (0~:i~5M~axx) d -0 +-- (0.018 ~) - - 12.5 Mi 0.