KODENSHI KOREA
SJMN90R1K2I - N-Channel MOSFET
SJMN90R1K2I
N-Ch Trench MOSFET
Power Switching Application
Features
• Drain-source breakdown voltage: BVDSS=900V • Low gate charge device: Qg=13nC (
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SJMN90R1K2I N-Ch Trench MOSFET Power Switching Ap.
KODENSHI KOREA
SJMN90R1K2I Distributor
