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SJMN90R1K2I

N-Channel MOSFET

SJMN90R1K2I Features

* Drain-source breakdown voltage: BVDSS=900V

* Low gate charge device: Qg=13nC (Typ.)

* Low drain-source On-resistance: RDS(on)=1Ω (Typ.)

* Advanced trench process technology

* High avalanche energy, 100% test Ordering Information Part Number Marking Packa

SJMN90R1K2I Datasheet (426.06 KB)

Preview of SJMN90R1K2I PDF

Datasheet Details

Part number:

SJMN90R1K2I

Manufacturer:

KODENSHI KOREA

File Size:

426.06 KB

Description:

N-channel mosfet.

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TAGS

SJMN90R1K2I N-Channel MOSFET KODENSHI KOREA

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