SJMN90R1K2I N-Channel MOSFET

KODENSHI KOREA

SJMN90R1K2I Description

SJMN90R1K2I N-Ch Trench MOSFET Power Switching Application .

SJMN90R1K2I Features

* Drain-source breakdown voltage: BVDSS=900V
* Low gate charge device: Qg=13nC (Typ. )
* Low drain-source On-resistance: RDS(on)=1Ω (Typ. )
* Advanced trench process technology
* High avalanche energy, 100% test Ordering Information Part Number Marking Packa

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Datasheet Details

Part number: SJMN90R1K2I
Manufacturer: KODENSHI KOREA
File Size: 426.06 KB
Datasheet: SJMN90R1K2I-AUK.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET KODENSHI KOREA

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