SJMN90R1K2I Datasheet - KODENSHI KOREA

SJMN90R1K2I, N-Channel MOSFET

SJMN90R1K2I N-Ch Trench MOSFET Power Switching Application .

Features

* Drain-source breakdown voltage: BVDSS=900V
* Low gate charge device: Qg=13nC (Typ. )
* Low drain-source On-resistance: RDS(on)=1Ω (Typ. )
* Advanced trench process technology
* High avalanche energy, 100% test Ordering Information Part Number Marking Packa

SJMN90R1K2I-AUK.pdf