Part number:
SJMN90R1K2I
Manufacturer:
KODENSHI KOREA
File Size:
426.06 KB
Description:
N-channel mosfet.
* Drain-source breakdown voltage: BVDSS=900V
* Low gate charge device: Qg=13nC (Typ.)
* Low drain-source On-resistance: RDS(on)=1Ω (Typ.)
* Advanced trench process technology
* High avalanche energy, 100% test Ordering Information Part Number Marking Packa
SJMN90R1K2I Datasheet (426.06 KB)
SJMN90R1K2I
KODENSHI KOREA
426.06 KB
N-channel mosfet.
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