SJMN90R1K2I - N-Channel MOSFET

KODENSHI KOREA

Datasheet Details

Drain-source breakdown voltage: BVDSS=900V.
Low gate charge device: Qg=13nC (Typ. ).
Low drain-source On-resistance: RDS(on)=1Ω (Typ. ).
Advanced trench process technology.
High avalanche energy, 100% test Ordering Information Part Number Marking Package SJMN90R1K2I SJMN90R1K2 Marking Information I-PAK GDS I-PAK SJMN 90R1K2 YWW.
Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW.
-. YWW: Date Code (year, wee.

📁 SJMN90R1K2I Similar Datasheet

Other Datasheets by KODENSHI KOREA

Published: Feb 7, 2019 |