SK12 Datasheet | Specifications & PDF Download

GaAs N- CHANNEL DUAL GATE MES TYPE 3SK121 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance

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MITSUBISHI INTELLIGENT POWER MODULES PM25RSK120 FLAT-BASE TYPE INSULATED PACKAGE B D J TYP TYP AA Z K U L 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

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2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V ga

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HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-172B (Z) Rev. 2 Aug. 1995 Features • High reverse voltage. (VR = 400V) • LLD

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Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-

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