SK12 Datasheet | Specifications & PDF Download

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SK12 - S110 DO-21

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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Rating: 1 ★ (4 votes)

2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) *CMPAK is a tradem

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HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Features • Low reverse recovery time. (trr =3.0ns max)

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www.DataSheet4U.com www.DataSheet4U.com

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Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching

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2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V ga

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Rating: 1 ★ (3 votes)

2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variat

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (3 votes)