SK12-L Datasheet | Specifications & PDF Download

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GaAs N- CHANNEL DUAL GATE MES TYPE 3SK121 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-

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2SK1277 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 250V 0,12Ω 30A 150W > Outline Dr

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2SK1276A F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 250V 0,25Ω 20A 100W > Outline D

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V ga

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isc N-Channel MOSFET Transistor 2SK1212 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Min

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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PSS, PSK Series 9 25 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3 48 V DC No input to output isolation • Efficiency

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2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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