SK12-L Datasheet | Specifications & PDF Download

GaAs N- CHANNEL DUAL GATE MES TYPE 3SK121 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance

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MITSUBISHI INTELLIGENT POWER MODULES PM25RSK120 FLAT-BASE TYPE INSULATED PACKAGE B D J TYP TYP AA Z K U L 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

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2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V ga

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SK 120 GB 12F4 T SEMITOP® 3 IGBT module SK 120 GB 12F4 T Target Data Features • Compact design • One screw mounting module • Optimum heat transfer an

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate

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