SK12-L Datasheet | Specifications & PDF Download

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2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) *CMPAK is a tradem

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SK12 - S110 DO-21

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Features • Low reverse recovery time. (trr =3.0ns max)

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DSK12~DSK120 S-DSK12~S-DSK120 Features ● Low profile package ● Ideal for automated placement ● Low power losses, high efficiency ● Low forward voltag

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Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching

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2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V ga

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2SK1277 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 250V 0,12Ω 30A 150W > Outline Dr

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2SK1280 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 0,5Ω 18A 150W > Outline Dra

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