SK13-L Datasheet | Specifications & PDF Download

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1378 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Vo

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2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications 4

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2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−sou

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2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Dri

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FE

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M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 www.datasheet4u.com ULTRA HIGH VOLTAGE VERY HIGH SPEED DIFFERENTIAL OP-AMP 131 (315) 701-6751

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2SK1301 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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2SK1304 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch

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2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK1342 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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