SK16-L Datasheet | Specifications & PDF Download

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Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic packag

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Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic packag

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Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic packag

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1632 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Vo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source

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2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Free D

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which

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Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic packag

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2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier Features • Package Dimensions unit :

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2SK1668 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK1671 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channe

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