SK202 Datasheet | Specifications & PDF Download

2SK2021-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

Rating: 1 ★ (8 votes)

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching S

Rating: 1 ★ (5 votes)

2SK2023-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

Rating: 1 ★ (4 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (4 votes)

isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed

Rating: 1 ★ (4 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum

Rating: 1 ★ (4 votes)

2SK2020-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

Rating: 1 ★ (3 votes)

2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

Rating: 1 ★ (3 votes)

2SK2025-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

Rating: 1 ★ (3 votes)

2SK2027-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

2SK2029-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

Rating: 1 ★ (3 votes)

polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for M

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo

Rating: 1 ★ (3 votes)

SK2020CD2 SK20100CD2 SK2020CD2 SK20100CD2 Surface Mount Schottky Rectifiers– Common Cathode Schottky-Gleichrichter für die Oberflächenmontage

Rating: 1 ★ (3 votes)