SK225 Datasheet | Specifications & PDF Download

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SK225xD Series Agency Recognitions Agency Agency File Number E71639 Main Features Symbol IT(RMS) VDRM/ VRRM IGT Value 25 1200 40 Unit A V mA Thy

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isc N-Channel MOSFET Transistor 2SK2251-01 DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed

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3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV T

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2SK2252-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2255-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

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SK225xD Series Agency Recognitions Agency Agency File Number E71639 Main Features Symbol IT(RMS) VDRM/ VRRM IGT Value 25 1200 40 Unit A V mA Thy

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2SK2252-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot

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SK225GH07H5TD1E2 SEMITOP®E2 H-Bridge Engineering Sample SK225GH07H5TD1E2 Target Data Features* • Optimized design for superior thermal performances •

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2SK2250-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2253-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2254-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2254-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2258-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2251-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2258 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Ea

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2SK2250-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2257-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo

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