SK32 Datasheet | Specifications & PDF Download

SILICON N CHANNEL MPS TYPE (fr-MOS) 2SK324 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APP

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) =

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2SK3272-01L,S Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET

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www.DataSheet4U.com SMD Type MOS Field Effect Transistor 2SK3295 TO-263 Features 4.5 V drive available Low on-state resistance RDS(on)1 = 18 mÙ MAX.

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www.DataSheet4U.com 2SK3234 N MOS FET ADJ-208-696F (Z) 7 2002.01 • • • • • RDS(on) =0.65Ω typ. IDSS=1µA max (at VDS=500V) tf=25ns typ (at VGS=10V,

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2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS (on) = 6 mΩ typ.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET Plehtatsp:e/M/vaiiwsniwttefw.

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isc N-Channel MOSFET Transistor 2SK3270-01 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor 2SK3218 FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Re

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2SK3217-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving po

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2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3224 2SK3224-Z P

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2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

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Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4

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Ordering number : ENN6600 Preliminary Features • Low ON resistance. • 4V-drive. • Ultrahigh-spped switching. 2SK3279 N-Channel Silicon MOSFET 2SK327

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2SK3255 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Abs

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device

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: ) SILICON N CHANNEL MOS TYPE 0T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLIC

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