SK32 Datasheet | Specifications & PDF Download

2SK3271-01 Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60

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2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features • Low on-resist

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2SK3255 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Abs

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3298 is N-channel MOS FET device t

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-C

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesa

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2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV) 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications

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2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor

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www.DataSheet4U.com www.DataSheet4U.com 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator App

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www.DataSheet4U.com 2SK3234 N MOS FET ADJ-208-696F (Z) 7 2002.01 • • • • • RDS(on) =0.65Ω typ. IDSS=1µA max (at VDS=500V) tf=25ns typ (at VGS=10V,

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2SK3218-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

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2SK3273-01MR Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET

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2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving po

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