SK320 Datasheet | Specifications & PDF Download

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N1457. Rev. - Applications: SK320B SCHOTTKY RECTIFIER • Switching power supply • Converters • F

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK320 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt

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MOSPEC Surface Mount Schottky Barrier rectifiers Using the Schottky Barrier principle with a Molybdenum barrier meta. These state-of-the-art geometry

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SK32C THRU SK320C 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK32C

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0948. Rev. - Applications: SK320 SCHOTTKY RECTIFIER • Switching power supply • Converters • Fr

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2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance

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REVERSE VOLTAGE: FORWARD CURRENT: SK32A THRU SK320A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 20 to 200 VOLTS 3.0 AMPERE FEATURES · Plastic package h

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SK315C THRU SK320C SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 3.0 Ampere FEATURES ● The plastic package carries

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SK32A THRU SK320A 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK32A

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