SK320 Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3204 is N-Channel MOS Field Effe

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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REVERSE VOLTAGE: FORWARD CURRENT: SK32A THRU SK320A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 20 to 200 VOLTS 3.0 AMPERE FEATURES · Plastic package h

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive dev

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2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK320 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt

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2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor

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SK32AS THRU SK320AS 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board spac

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® WON-TOP ELECTRONICS SK3150 – SK3200 3.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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CYStech Electronics Corp. Spec. No. : C333SC Issued Date : 2011.01.07 Revised Date :2014.09.24 Page No. : 1/ 6 3.0Amp. Surface Mount Schottky Barrie

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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0.126(3.20) 0.114(2.90) 0.103(2.62) 0.079(2.06) 0.060(1.52) 0.030(0.76) SK32C THRU SK3200C SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Vo

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SK32C thru SK320C SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 100 VOLTS CURRENT - 3.0 AMPERES SMC/DO-214AB 0.126 (3.20) 0.114 (2.90)

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SK32C THRU SK320C 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK32C

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MOSPEC Surface Mount Schottky Barrier rectifiers Using the Schottky Barrier principle with a Molybdenum barrier meta. These state-of-the-art geometry

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