SK84 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK843 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Minimum Lot-to-Lot variat

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Chip Schottky Barrier Rectifier FMSK820Y-DG THRU FMSK8100Y-DG 8.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V Features • Batch process des

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Minimum Lot-to-Lot variations for

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Chip Schottky Barrier Rectifier FMSK820Y-DG THRU FMSK8100Y-DG 8.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V Features • Batch process des

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SK82C thru SK810C Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for au

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SMD Type Diodes Schottky Diodes SK82 ~ SK810 ■ Features ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ●

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This product complies with the RoHS Directive (EU 2002/95/EC). SK840303 Silicon N-channel MOS FET For DC-DC converter circuits  Overview SK840303 i

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SK82 SK815 SK82 SK815 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden IFAV = 8.0 A VF1 < 0.50 V Tjmax = 150°C VRRM =

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SMD Type Diodes Schottky Diodes SK82 ~ SK810 ■ Features ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ●

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® WON-TOP ELECTRONICS SK82 – S810 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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