SK86 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 2SK868 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Fast Switching Speed ·Min

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot

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® WON-TOP ELECTRONICS SK82 – S810 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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isc N-Channel MOSFET Transistor 2SK868A DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·Mi

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Fast Switching Speed ·Minimum Lot

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Chip Schottky Barrier Rectifier FMSK820Y-DG THRU FMSK8100Y-DG 8.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V Features • Batch process des

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·Minimum Lot

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DReovcisNioon. . T2 T4-EA-14480 SK8603170L Silicon N-channel MOS FET For Load-switching / For DC-DC Converter  Features  Low Drain-source On-state

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SK82 SK815 SK82 SK815 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden IFAV = 8.0 A VF1 < 0.50 V Tjmax = 150°C VRRM =

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SK82C thru SK810C Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for au

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SMD Type Diodes Schottky Diodes SK82 ~ SK810 ■ Features ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ●

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UNISONIC TECHNOLOGIES CO., LTD SK86 Preliminary 8A, 60V SCHOTTKY RECTIFIER  DESCRIPTION The UTC SK86 is a schottky rectifier diode, it uses UTC’s

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