.
Sinopower
63
SM3307PSQG - P-Channel MOSFET
SM3307PSQA/SM3307PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V · .
Silicon Motion
36
SM3257ENBA - High Speed USB 2.0 Flash Memory Controller
DYNA FAMILY SM3257ENBAential forHigh Speed USB 2.0 Flash Memory Controller SMI CoinMOfiidncrlyoDatasheet Revision 1.0 Sep 2014 SM3257ENBA Datasheet.
Sinopower
32
SM3316NSQG - N-Channel Enhancement Mode MOSFET
SM3316NSQG Features • 30V/25A, RDS(ON) =16mΩ(max.) @ VGS =10V RDS(ON) =21.5mΩ(max.) @ VGS =4.5V • Avalanche Rated • 100% UIS + R Tested g • Reli.
Sinopower
29
SM3319NSQA - N-channel MOSFET
SM3319NSQA/SM3319NSQG ® N-Channel Enhancement Mode MOSFET Features • 30V/23A, RDS(ON) = 21mΩ(max.) @ VGS = 10V RDS(ON) = 30mΩ(max.) @ VGS = 4.5V.
A1semi
22
ASM3055 - N-Channel FET
?ÿ@ÿAÿBCÿDDÿEÿFÿHÿDÿBCÿDÿIEÿJÿEDÿKÿÿLÿMNÿEÿÿLÿOÿPÿQHÿRÿÿSÿÿTÿLÿUÿVÿWÿWXY 0123456748891 377 3 137 2 9 7 7 9.
Sinopower
20
SM3308NSQA - N-Channel MOSFET
SM3308NSQA Features · 30V/35A, RDS(ON) =7.3mW(max.) @ VGS =10V RDS(ON) =10.5mW(max.) @ VGS =4.5V · 100% UIS + Rg Tested · ESD Protection · Reliable an.
Sinopower
20
SM3319NAQG - N-Channel MOSFET
SM3319NAQG Features · 30V/14A, RDS(ON) = 24mW(max.) @ VGS = 10V RDS(ON) = 35mW(max.) @ VGS = 4.5V · Avalanche Rated · Reliable and Rugged · ESD Protec.
Sinopower
16
SM3317NSQA - N-channel MOSFET
SM3317NSQA Features • 30V/34A, RDS(ON) =11.5mΩ(max.) @ VGS =10V RDS(ON) =15.5mΩ(max.) @ VGS =4.5V • Avalanche Rated • Reliable and Rugged • Lead Free .
Sinopower
16
SM3016NSU - N-Channel MOSFET
SM3016NSU Features · 30V/75A, RDS(ON)=5mW (Max.) @ VGS=10V RDS(ON)=6.9mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availab.
Silicon Motion
16
SM3255 - USB2.0 Single-Channel Flash Controller
Mobile Storage Zoom Family SM3255 USB2.0 Single-Channel Flash Controller Overview The SM3255 is a USB Flash drive controller that combines high comp.
Sinopower
15
SM3303PSQG - P-Channel MOSFET
SM3303PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-50A*, RDS(ON) =9.5mW(max.) @ VGS =-10V RDS(ON) =16mW(max.) @ VGS =-4.5V · Reliable a.
SeCoS
15
SM3200B - Schottky Barrier Rectifiers
Elektronische Bauelemente SM3200B Voltage 200 V 3.0 Amp Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead.
Sinopower
14
SM3113NSU - N-Channel MOSFET
SM3113NSU Features · 30V/85A, RDS(ON)= 3mW (Max.) @ VGS=10V RDS(ON)= 4.6mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Avail.
Globaltech
14
GSM3414S - 20V N-Channel Enhancement Mode MOSFET
20V N-Channel Enhancement Mode MOSFET Product Description GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide exc.
Sinopower
14
SM3323NHQA - N-Channel MOSFET
SM3323NHQA ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/54A, RDS(ON)= 6mW (Max.) @ VGS=10V RDS(ON)= 9.7mW (Max.) @ VGS=4.5V .
2B Elettronica
14
TPSM32A - Quartz Crystal
Quartz Crystal : General description Crystals are realized with NT cut, in order to achieve low resonance frequency values (30KHz/80KHz). Widely used .
ON Semiconductor
14
ASM3P2869A - Low Power Peak EMI Reducing Solution
ASM3P2869A Low Power Peak EMI Reducing Solution Description The ASM3P2869A is a versatile spread spectrum frequency modulator designed specifically f.
Sinopower
13
SM3331PSQG - P-Channel MOSFET
SM3331PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-40A, RDS(ON) = 6.1mW(max.) @ VGS =-10V RDS(ON) = 11mW(max.) @ VGS =-4.5V · HBM ESD p.
Alliance Semiconductor Corporation
13
ASM3P2759A - Low Power Peak EMI Reducing Solution
September 2005 www.DataSheet4U.com rev 1.6 ASM3P2759A Low Power Peak EMI Reducing Solution Features Generates an EMI optimized clock.
Alliance Semiconductor Corporation
13
ASM3P5821A - Low Power EMI Reduction IC
October 2003 www.DataSheet4U.com ASM3P5821A rev 1.0 Features FCC approved method of EMI attenuation. Generates a 1X low EMI spread spectrum clock o.