SM33 Datasheet | Specifications & PDF Download

SM3307PSQA/SM3307PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V ·

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SM3319NSQA/SM3319NSQG ® N-Channel Enhancement Mode MOSFET Features • 30V/23A, RDS(ON) = 21mΩ(max.) @ VGS = 10V RDS(ON) = 30mΩ(max.) @ VGS = 4.5V

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SM3316NSQG Features • 30V/25A, RDS(ON) =16mΩ(max.) @ VGS =10V RDS(ON) =21.5mΩ(max.) @ VGS =4.5V • Avalanche Rated • 100% UIS + R Tested g • Reli

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PCM SM3XX6 SM3XX6 ，。 SM3XX6。 * * PCM * * * * IRM-3 SM3XX6 www.DataSheet.net/ * ， TV、VCR 、VCD、DVD、 ：1.2 1 2004.05.14 Datas

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SM3317NSQA Features • 30V/34A, RDS(ON) =11.5mΩ(max.) @ VGS =10V RDS(ON) =15.5mΩ(max.) @ VGS =4.5V • Avalanche Rated • Reliable and Rugged • Lead Free

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SM3307PSQA/SM3307PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V ·

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SM3305PSQA/SM3305PSQG ® P-Channel Enhancement Mode MOSFET Features • -30V/-40A, RDS(ON) =12mΩ(max.) @ VGS =-10V RDS(ON) =17mΩ(max.) @ VGS =-6V

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ASM330LHB Datasheet High-accuracy 6-axis inertial measurement unit (IMU) for automotive applications Features Product status link ASM330LHB Product

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SM3335PSQA ® P-Channel Enhancement Mode MOSFET Features • -30V/-39A, RDS(ON) = 14mΩ(max.) @ VGS =-10V RDS(ON) = 24mΩ(max.) @ VGS =-4.5V • Reliable a

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SM3383EHQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 30V/14A, RDS(ON) = 10.8mW (max.) @ VGS = 10V RDS(ON) = 16.9mW (max.) @ VGS

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ISM330DHCX Datasheet iNEMO inertial module with embedded Machine Learning Core: always-on 3D accelerometer and 3D gyroscope with digital output for in

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TPSM33615, TPSM33625 SNVSCB1B – DECEMBER 2022 – REVISED MARCH 2023 TPSM336x5, 3-V to 36-V Input, 1-V to 15-V Output, 1.5-A, and 2.5-A Synchronous Buck

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SM3326NHQA Features · 30V/27.5A, RDS(ON) =9mW(max.) @ VGS =10V RDS(ON) =14mW(max.) @ VGS =4.5V · 100% UIS + Rg Tested · ESD Protection · Reliable and

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ISM330DLC Datasheet iNEMO 6-axis IMU: 3-axis accelerometer and 3-axis gyroscope with digital output for industrial applications Product status link I

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SM3335PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-39A, RDS(ON) = 14mW(max.) @ VGS =-10V RDS(ON) = 24mW(max.) @ VGS =-4.5V · 100% UIS +

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TPSM33615, TPSM33625 SNVSCB1B – DECEMBER 2022 – REVISED MARCH 2023 TPSM336x5, 3-V to 36-V Input, 1-V to 15-V Output, 1.5-A, and 2.5-A Synchronous Buck

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SM3380EHQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 30V/18A, RDS(ON) = 10.8mW (max.) @ VGS = 10V RDS(ON) = 17.5mW (max.) @ VGS

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Replaces DS6112-1 DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-2 September 2014 (LN31983) FEATURES  Low VCE(sat) Device  10µs Short Circuit

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic pac

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SM3308NSQA Features · 30V/35A, RDS(ON) =7.3mW(max.) @ VGS =10V RDS(ON) =10.5mW(max.) @ VGS =4.5V · 100% UIS + Rg Tested · ESD Protection · Reliable an

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