SN7002 Datasheet | Specifications & PDF Download

MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le

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MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design

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SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Qualified according to AEC Q101 • Halogen-free ac

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MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design

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MSN7002Z 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design

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MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD R

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SN 7002 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Pin 2 S Pin 3 D Type SN 700

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SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Qualified according to AEC Q101 • Halogen-free ac

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