SPA11N60C3E8185 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c

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