SPD07N60S5 Datasheet | Specifications & PDF Download

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge •

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isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche

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