SPW16N50C3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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Final data SPW16N50C3 VDS @ Tjmax RDS(on) ID 560 0.28 16 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ul

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