SS23 Datasheet | Specifications & PDF Download

KSS Series Subminiature Side Actuated Tact Switch for SMT www.DataSheet4U.com Features/Benefits • • • • • • • Low profile of 1.6 mm Excellent tactile

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Ordering number : ENN6865 Features • Low ON-resistance. • 4.0V drive. • Ultrahigh-speed switching. FSS234 N-Channel Silicon MOSFET FSS234 DC / DC C

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FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 8A, 200V, rDS(ON) = 0.440Ω • Total Dos

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DATA SHEET MR Sensor MRSS23E Low voltage operating type Built-in IC ultra-minimum MR sensor • Ÿ FEATURES • E Micro power (6µW(typ):Vcc=1.8V) and Hi

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Data Sheet FSS23A0D, FSS23A0R June 1999 File Number 4485.2 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discr

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Ordering number:ENN6359 Features · Low ON resistance. · 4V drive. N-Channel Silicon MOSFET FSS232 Load Switching Applications Package Dimensions unit

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FSS23A4D, FSS23A4R June 1998 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of In

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KSS Series Subminiature Side Actuated Tact Switch for SMT www.DataSheet4U.com Features/Benefits • • • • • • • Low profile of 1.6 mm Excellent tactile

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

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SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS

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FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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SS239 CMOS Omnipolar High Sensitivity Micropower Hall Switch Packages Features and Benefits – – – – Operation down to 2.5V Micropower consumption fo

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Elektronische Bauelemente ESS23A Voltage 200 V 2.0 Amp Super Fast Recovery Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & le

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Suntan® Su® SS22A THRU SS210A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATU RE S ◆Low profile surf

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SSS2323 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) 35 @VGS = -4.5V -20V -4A 55 @VGS = -2.5V 100 @VGS = -1.8V G S D SOT-

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Packages 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) SS2309 Hall Latch - High Sensitivity Features and Benefits – Wide operating voltage range fro

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FSS234D, FSS234R June 1998 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features · Low ON resistance. · 4V drive. Package Dimensions un

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SS239-VB SS239-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.008 at VGS= 10 V 0.011 at VGS

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Schottky Rectifier SS23, SS24, SS25, SS26, SS28, SS29, S210 The SS23−S210 series includes high−efficiency, low power loss, general−propose Schottky re

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