DESCRIPTION The SSF2616E uses advanced trench tech.
SSF2616E - MOSFET
DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.SSF2616E - Dual N-Channel MOSFET
DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.