Composite Devices Silicon P-Channel MOS / Epitaxia.
Toshiba Semiconductor
1
SSM6G18NU - Silicon Epitaxial Schottky Barrier Diode
Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1. Applications • Power Management Switches 2. Features (1).