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SSM6G18NU Datasheet - Toshiba Semiconductor

SSM6G18NU-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6G18NU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

457.28 KB

Description:

Silicon epitaxial schottky barrier diode.

SSM6G18NU, Silicon Epitaxial Schottky Barrier Diode

SSM6G18NU Features

* (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Fe

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