Part number:
SSM6G18NU
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
457.28 KB
Description:
Silicon epitaxial schottky barrier diode.
SSM6G18NU-ToshibaSemiconductor.pdf
Datasheet Details
SSM6G18NU Features
* (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Fe
SSM6G18NU-ToshibaSemiconductor.pdf
Datasheet Details
SSM6G18NU
Toshiba ↗ Semiconductor
457.28 KB
Silicon epitaxial schottky barrier diode.
SSM6G18NU Distributor
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