Datasheet Specifications
- Part number
- SSM6G18NU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 457.28 KB
- Datasheet
- SSM6G18NU-ToshibaSemiconductor.pdf
- Description
- Silicon Epitaxial Schottky Barrier Diode
Description
Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1.Applications * Power Management Switches 2.Feat.
Features
* (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode FeSSM6G18NU Distributors
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