* (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Fe
SSM6G18NU Datasheet (457.28 KB)
SSM6G18NU
Toshiba ↗ Semiconductor
457.28 KB
Silicon epitaxial schottky barrier diode.
Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier
SSM6G18NU
SSM6G18NU
1. Applications
* Power Management Switches
2. Feat.
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