* low RDS (ON) and low-voltage operation Unit: mm Q1 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating -12 ±12 -1.0 -2.0 Unit V V A Q2 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gat
SSM6E01TU Datasheet (174.63 KB)
SSM6E01TU
Toshiba ↗ Semiconductor
174.63 KB
Silicon p-channel mosfet.
SSM6E01TU
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
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