* low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating
* 20 ±8 -1.8 -3.6 Unit V V A 0.7±0.05 Q2 Absolute Maximum Ratings (Ta = 25°C)
SSM6E03TU Datasheet (384.72 KB)
SSM6E03TU
Toshiba ↗ Semiconductor
384.72 KB
Silicon p-channel mosfet.
SSM6E03TU
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type
SSM6E03TU
Power Management Switch Applications
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