.
Silikron Semiconductor
SSTS20100F - Schottky Barrier Rectifier
SSTS20100/SSTS20100F Main Product Characteristics: IF VRRM Tj(ma.
Silikron Semiconductor
SSTS20100 - Schottky Barrier Rectifier
SSTS20100/SSTS20100F Main Product Characteristics: IF VRRM Tj(ma.
Silikron Semiconductor
SSTS20100D - Schottky Barrier Rectifier
SSTS20100D Main Product Characteristics: IF VRRM Tj(max) Vf(max) 20A 100V 150℃ 0.85V Features and Benefits: High Junction Temperature High ESD.
Silikron Semiconductor
SSTS20100I - Schottky Barrier Rectifier
SSTS20100I Main Product Characteristics: IF VRRM Tj(max) Vf(max) 20A 100V 150℃ 0.85V Features and Benefits: High Junction Temperature High ESD.
Silikron Semiconductor
SSTS20100R - Schottky Barrier Rectifier
SSTS20100R/RF Main Product Characteristics: IF VRRM Tj(max) Vf(m.
Silikron Semiconductor
SSTS20100RF - Schottky Barrier Rectifier
SSTS20100R/RF Main Product Characteristics: IF VRRM Tj(max) Vf(m.
