STI11NM60ND Datasheet | Specifications & PDF Download

STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package Features TAB Order code VDS at TJ max. RDS(on

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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