STP11NM60N Datasheet | Specifications & PDF Download

STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order cod

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www.DataSheet4U.com STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation

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isc N-Channel MOSFET Transistor STP11NM60ND FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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