STS-3 Datasheet | Specifications & PDF Download

MX13002 1. : 2. NPN 3. : TO-251 BCE 4. ( ) , - Tamb=25 Tcasc=25 5. Vcbo Vceo Vebo Ic T(vj) Ptot Ptot - - 600 400 9 1.5 150 1.25 20 BVcbo BV

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GSTSS8050 NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features „ Collector

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HR7P171 Datasheet 8-bit MCU HR7P171 Datasheet  Brief  Datasheet  Specifications SHANGHAI EASTSOFT MICROELECTRONICS CO., LTD. 2017.12.08 Prelimin

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ISOCOM COMPONENTS ISTS100,ISTS200 DESCRIPTION The ISTS100 and ISTS200 series of opaque photointerrupters are single channel switches consisting of a

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GBJ25005 THRU GBJ2510 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 25.0 Amperes GBJ FEATURES • Plastic material

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TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in stand

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r re Pro STS3409L Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m

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GBJ25005 THRU GBJ2510 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 25.0 Amperes GBJ FEATURES • Plastic material

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www.DataSheet4U.com xr NOVEMBER 2006 PRELIMINARY XRT91L32 REV. 1.0.2 STS-12/STM-4 OR STS-3/STM-1 SONET/SDH TRANSCEIVER GENERAL DESCRIPTION The XR

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Gr Pr STS3409 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -2.2A R D

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GBJ25005 THRU GBJ2510 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 25.0 Amperes GBJ FEATURES • Plastic material

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www.DataSheet4U.com ISTS149, ISTS703A, ISTS708 REFLECTIVE OPTICAL SWITCHES DESCRIPTION The ISTS149, ISTS703A, ISTS708 each consist 5.1 of an infrar

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www.DataSheet4U.com STSJ60NH3LL N-channel 30V - 0.004Ω - 15A - PowerSO-8™ STripFET™ Power MOSFET for DC-DC conversion General features Type STSJ60NH3

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Silan Microelectronics STS65R280D(F)(S)S2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R280D(F)(S)S2 is an N-channel en

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Silan Microelectronics STS65R360D(F)(S)S2_Datasheet 12A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R360D(F)(S)S2 is an N-channel en

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GSTSS8050LT1 NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Packages & Pin Ass

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GSTS9014LT1 NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features „ Collect

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