STW60NM50N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor STW60NM50N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.043Ω ·100% avalanche tested ·Minimum Lot-to-Lot v

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STW60NM50N N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Order cod

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