SW-236 Datasheet | Specifications & PDF Download

DP2360 Highly Integrated Offline Current Mode PWM Power Switch FEATURES  Integrated with 650V Power MOSFET  ±1% CV Regulation  Less than 75mW Stan

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SW6236 AACC SOC AACC SOC 1. SW6236 SOC， A+A+Cinout+Cinout 。 5A ，22.5W ； PPS/PD/SCP/FCP/QC/AFC/PE/BC1.2 ； 、/LED 。 2. • 3. • • ➢ ，、、、

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DP2366 Highly Integrated Offline Current Mode PWM Power Switch FEATURES  Integrated with 650V Power MOSFET  ±1% CV Regulation  Less than 75mW Stan

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DP2365 Highly Integrated Offline Current Mode PWM Power Switch FEATURES  Integrated with 650V Power MOSFET  ±1% CV Regulation  Less than 75mW Stan

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2N2369A MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) HIGH SPEED, MEDIUM POW

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www.DataSheet4U.com 2STF2360 2STN2360 Low voltage fast-switching PNP power transistors Features ■ ■ ■ ■ Very low collector-emitter satuaration volta

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Data Sheet December 2009 AR8236 Six-Port Fast Ethernet Switch General Description The AR8236 is a highly integrated Six-port Fast Ethernet switch wi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369

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TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N

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2STF2360 Low voltage fast-switching PNP power transistors 4 3 2 1 SOT-89 Figure 1. Internal schematic diagram Datasheet - production data Applicati

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EtherMap-3 Plus Device OC-3 Ethernet over SONET Mapper with Rapid Restoration TXC-04236 DATA SHEET FEATURES • Eight 10/100 Mbit/s Ethernet ports, eac

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DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369A NPN switching transistor Product specification Supersedes data of September 1994 File under Discret

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ON Semiconductort Switching Transistors NPN Silicon MPS2369 MPS2369A* MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Co

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  MSR2N2369AUB / UBC   Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Screened Levels: MSR Radiation

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SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low cur

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2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-of

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2N2368 2N2369,A 2N3227 2N2369A JAN, JTX, JTXV AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating C

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Data Sheet FEATURES Latch-up immune under all circumstances 2.5 pF off source capacitance 12 pF off drain capacitance −0.6 pC charge injection Low lea

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DAP236U Diodes Band switching diode DAP236U Applications High speed switching External dimensions (Units : mm) DAP236U 2.0±0.2 1.3±0.1 0.65 0.65 0.

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2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions

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