Sanken electric Datasheet | Specifications & PDF Download

STR-W6252D www.DataSheet4U.com 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators Features and Benefits ▪ Overcurrent protection (OCP)

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SAP16P (Complement to type SAP16N) Equivalent circuit Emitter resistor Application: Audio sElectrical Characteristics Symbol ICBO IEBO VCEO hFE V VC

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qSI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type sFeatures • • • • TO-3P package 3-terminal regulator Output current: 2

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Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series Data Sheet General Descriptions The STR-A6000 series are power ICs for switch

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www.DataSheet4U.com www.DataSheet4U.com

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VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623S Data Sheet Description The MGD623S is 600 V trench IGBT. Sanken original trench

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Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series General Descriptions The STR-A6000 series are power ICs for switching power su

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Darlington transistors with built-in temperature compensation diodes for audio amplifier applications SAPseries Features qBuilt-in temperature compen

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Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series

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Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series Data Sheet General Descriptions The STR-A6000 series are power ICs for switch

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2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A

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2SD2390Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio,

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VRM = 400 V, IF(AV) = 0.8 A, trr = 100 ns Fast Recovery Diode EG1 Data Sheet Description The EG1 is a fast recovery diode of 400 V / 0.8 A. The maxi

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Low Profile and Creeping distance of 4mm Package 650V, 2.8Ω, tOFF= 8µs, PRC Off-Line Switching Regulator STR-V152 General Descriptions The STR-V100 s

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2SC2023 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings Symbol VCBO VCEO www.DataSheet4U.net VEBO IC IB PC Tj Tstg 2SC2023 300

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2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC

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Built-in Diode at C–E Low VCE (sat) 2SA1568 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=–60V VEB=–6

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600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Dio

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Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series Data Sheet General Descriptions The STR-A6000 series are power ICs for switch

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2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tst

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