.
Seme LAB
12
2N6660 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low .
Seme LAB
8
2N6784 - N-Channel MOSFET
www.DataSheet4U.com 2N6784 Dimensions in mm (inches). 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N-Channel MOSFET i.
Semelab
8
2N6292 - HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS
2N6107 2N6292 MECHANICAL DATA Dimensions in mm 2.74 15.11 8.76 10.29 5.14 3.61 Dia. 1.26 6.35 4.57 1 23 13.51 HIGH SPEED MEDIUM POWER COMPLE.
Seme LAB
7
2N6753 - Bipolar NPN Device
www.DataSheet4U.com 2N6753 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.1.
Seme LAB
7
2N6437 - HIGH POWER PNP SILICON TRANSISTORS
2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.0.
Seme LAB
6
2N6253 - Bipolar NPN Device
2N6253 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.
Seme LAB
6
2N6655 - Bipolar NPN Device
2N6655 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.
Seme LAB
6
2N6659 - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6659 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURE.
Seme LAB
6
2N6300 - DARLINGTON SILICON POWER TRANSISTORS
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLIN.
Seme LAB
6
2N6308 - Bipolar NPN Device
2N6308 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
Seme LAB
5
2N6424 - Bipolar PNP Device
2N6424 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Herm.
Seme LAB
5
2N6230 - Bipolar PNP Device
2N6230 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.
Seme LAB
5
2N6661 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low .
Seme LAB
5
2N6849 - P-CHANNEL POWER MOSFET
LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N6849 P–CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on) FEATURES • Single pulse avalanche energy ra.
Seme LAB
5
2N6229 - Bipolar PNP Device
2N6229 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP .
Seme LAB
5
2N6671 - Bipolar NPN Device
2N6671 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
Seme LAB
5
2N6676 - Bipolar NPN Device
2N6676 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
Seme LAB
4
2N6514 - Bipolar NPN Device
2N6514 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .