Si-Power Datasheet | Specifications & PDF Download

www.DataSheet4U.com MS2601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier App

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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SHENZHENNSIWAYTECHNOLOGY NS4110B Oct.2018 V1.0 NS4110B 18W AB/D 1  ：6V-14V  ： 7W（CLASS D，7.4V/4Ω，THD=10%） 10W（CLASS D，9V/4Ω，THD=10%） 18W（CLAS

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OB2223 High Precision Low Cost MCM Power Switch GENERAL DESCRIPTION OB2223 is a high performance, high precision and low cost PWM Power switch for No

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AXS2030 5.2W AB/D AXS2030、5.2W  AB/D AB/D。EMIFM  D： 。 －5.2W (VDD=5.0V, RL =2Ω，THD+N=10%)  AB： AXS2030PSRR －5.2W (VDD=5.0V, RL =2Ω，THD

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PF7708B Single Channel WLED Driver with Integrated Dimming MOSFET Preliminary Specification P4        FEATURES  Wide Input Range: 9V to 30V  Curre

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TPK1031 Series 3-Channel Simple Power Sequencer with Adjustable Timing Control Features ◼ Input Voltage Range: 2.7 V to 5.5V ◼ Power-Up and Power-Dow

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·The BD707 and BD71

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

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2016 1HT251 NPN ： ： TJM：150℃ ： QZJ840611 G QZJ840611A G+ SJ614-73 GB4589.1-89 J ：Tstg：-55℃～150℃ ： ：Top：-55℃～125℃ FP14 Ptot ICM

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