Siemens Group Datasheet | Specifications & PDF Download

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isol

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ICs for Communications PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 Data Sheet 02.97 T2306-0V22-D1-7600 30%  530%  7 5HYLVLRQ +LVWRU

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BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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SIEMENS PNP Silicon Darlington Transistors High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 8

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Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic dis

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TLE 4269 5-V Low-Drop Fixed Voltage Regulator TLE 4269 Features q q q q q q q q q q Output voltage tolerance ≤ ± 2 % Very low current consumption

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BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation vol

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BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ)

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD:

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3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organ

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TLE 4266 5-V Low-Drop Voltage Regulator TLE 4266 Bipolar IC Features q q q q q q q q Output voltage tolerance ≤ ± 2 % Very low current consumption

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