Datasheet Summary
BSM 150 GT 120 DN2
IGBT Power Module Preliminary data
- Solderable Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate Type BSM 150 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
Package TRIPACK
Ordering Code C67070-A2518-A67
1200V 200A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 200 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
400 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.12 ≤ 0.28 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip...